TK4P50D

MOSFETs Silicon N-Channel MOS (π-MOS) TK4P50D 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 1.7 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 1.5 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 500 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P50D DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2009-12 1 2015-03-06 Rev.1.0 TK4P50D 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 4 A Drain current (pulsed) (Note 1) IDP 16 Power dissipation (Tc = 25 ) PD 80 W Single-pulse avalanche energy (Note 2) EAS 114 mJ Avalanche current (Note 3) IAR 4 A Repetitive avalanche energy (Note 3) EAR 8 mJ Reverse drain current (DC) (Note 1) IDR 4 A Reverse drain current (pulsed) (Note 1) IDRP 16 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design t...