TJ60S04M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ60S04M3L
1. Applications
• • • • Automotive Motor Drivers DC-DC Con...
TJ60S04M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ60S04M3L
1. Applications
Automotive Motor Drivers DC-DC Converters Switching Voltage
Regulators
2. Features
(1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
DPAK+
Start of commercial production
1
2011-03 2014-08-04 Rev.4.0
TJ60S04M3L
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating -40 -20/+10 -60 -120 90 146 -60 175 -55 to 175 W mJ A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Meth...