TK2P60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK2P60D
Switching Regulator Applications
• ...
TK2P60D
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK2P60D
Switching
Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 1.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
1.5 ± 0.2
6.5 ± 0.2 5.2 ± 0.2
Unit: mm
0.6 MAX.
5.5 ± 0.2 9.5 ± 0.3
1.2 MAX.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VGSS
ID
IDP
PD
EAS
IAR EAR Tch Tstg
600
V
±30
V
2
A 8
60
W
101
mJ
2
A
6
mJ
150
°C
-55 to 150
°C
0.8 MAX. 0.6 ± 0.15
1
1.05 MAX. 23
1.1 ± 0. 2 0.6 MAX.
2.3 ± 0.2 0.1 ± 0.1
2.3 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN
（HEAT SINK） 3. SOURSE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7J1B
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon revi...
