NCE3407

Pb Free Product http://www.ncepower.com NCE3407 NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S G D GENERAL FEATURES ● VDS = -30V,ID = -4.1A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view Package Marking And Ordering Information Device Marking 3407 Device NCE3407 Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit -30 ±20 -4.1 -20 1.4 -55 To 150 Unit V V A A W ℃ 90 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=-250μA VDS=-24V,VGS=0V Min -30 Typ Max Unit V -1 μA Wuxi NCE Power Semiconductor Co., Ltd Pa...