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TK16J55D
Silicon N-Channel MOSFET
Description
TK16J55D TOSHIBA Field Effect
Transistor
Silicon N Channel MOS Type (π-MOSⅦ) TK16J55D Switching
Regulator
Applications Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 ...
Toshiba Semiconductor
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