TK16H60C

TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK16H60C Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0. 32 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 V 600 V ±30 V 16 A 64 A 150 W 979 mJ 16 A 15 mJ 150 °C −55 to 150 °C 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC ― JEITA ― TOSHIBA 2-16K1A Weight: 3.8 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods...