RFK25P08

Semiconductor RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49230. BRAND RFH25P08 RFH25P10 RFK25P08 RFK25P10 G September 1998 Features -25A, -100V and -80V rDS(ON) = 0.150Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10) /Subject (-25A, 100V, 80V, 0.150 Ohm, PChannel Power MOSFETs) /Author () /Keywords (25A, 100V a80V, 0.150 Ohm, PChannel Power MOSFETs) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFH25P08 RFH25P10 RFK25P08 RFK25P10 PACKAGE TO-218AC TO-218AC TO-204AE TO-204AE Symbol D NOTE: When ordering, use the entire part number. S Packaging JEDEC TO -218AC JEDEC TO-204AE DRAIN SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1632.1 6-1 RFH25P08, RFH25P10, RFK25P08, RFK25P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwi...