HCTS30MS

HCTS30MS August 1995 Radiation Hardened 8-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW A 1 B 2 C 3 D 4 E 5 F 6 GND 7 14 VCC 13 NC 12 H 11 G 10 NC 9 NC 8 Y Features 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: >1 x Dose Rate Upset >10 10 1012 RAD (Si)/s RAD (Si)/s 20ns Pulse Latch-Up Free Under Any Conditions Military Temperature Range: -55oC to +125oC Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min Input Current Levels Ii ≤ 5µA at VOL, VOH A 14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14 TOP VIEW 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC NC H G NC NC Y Description The Intersil HCTS30MS is a Radiation Hardened 8-Input NAND Gate. A high on all input forces the output to a low state. The HCTS30MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. B C D E F GND Ordering Information PART NUMBER HCTS30DMSR HCTS30KMSR HCTS30D/Sample HCTS30K/Sample HCTS30HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sam...