MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E08N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low d...
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E08N1
1. Applications
Switching Voltage
Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TK100E08N1
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature
(Silicon limit)
(t = 1 ms) (Tc = 25)
(Note 1,2) (Note 1,3) (Note 1)
(Note 4)
VDSS VGSS
ID ID IDP PD EAS IAR Tch Tstg
80
V
±20
214
A
100
568
255
W
278
mJ
100
A
150
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated ...