TK1Q90A

MOSFETs Silicon N-Channel MOS (π-MOS) TK1Q90A 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.0 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK1Q90A 1: Gate (G) 2: Drain (D) (Heatsink) 3: Source (S) New PW-Mold2 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 1 A Drain current (pulsed) (Note 1) IDP 3 Power dissipation (Tc = 25) PD 20 W Single-pulse avalanche energy (Note 2) EAS 216 mJ Avalanche current IAR 1 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliabil...