TK18E10K3

MOSFETs Silicon N-channel MOS (U-MOS) TK18E10K3 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18E10K3 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A Drain current (pulsed) (Note 1) IDP 54 Power dissipation (Tc = 25) PD 71 W Single-pulse avalanche energy (Note 2) EAS 28 mJ Avalanche current IAR 18 A Repetitive avalanche energy (Note 3) EAR 7.1 mJ Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept ...