Power MOSFET
PD - 97378A
IRFS3004-7PPbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Sup...
Description
PD - 97378A
IRFS3004-7PPbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G D
HEXFET® Power MOSFET
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
D
40V 0.90mΩ 1.25mΩ 400A 240A
Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
c
S
S G S S
S
S
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case)
400 280 240 1610 380
Max.
Units
A
d
W W/°C V V/ns °C
f
2.5 ± 20 2.0 -55 to + 175 300 290 See Fig. 14, 15, 22a, 22b
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Ãd
e
Thermal Resistance
Symbol
RθJC RθJA
d j
mJ A mJ
Junction-to-Case Junction-to-Ambient (PCB Mount)
kl
Parameter
Typ.
––– –––
Max.
0.40 40
Units
°C/W
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