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TK12E60U
MOSFETs
Description
TK12E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60U 1. Applications Switching Voltage
Regulator
s 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)...
Toshiba Semiconductor
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