TJ9A10M3
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ9A10M3
1. Applications
• Switching Voltage Regulators Low drain-sourc...
TJ9A10M3
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ9A10M3
1. Applications
Switching Voltage
Regulators Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V)
2. Features
(1) (2) (3)
Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA)
Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating -100 ±20 -9 -18 19 25 -9 150 -55 to 150 W mJ A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2012-09-03 Rev.1.0
TJ9A10M3
5. Thermal Characteristics
Characteristics ...