SSM6J215FE

MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J215FE 1. Applications Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 154 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 104 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 79 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 59 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration ES6 SSM6J215FE 1,2,5,6: Drain 3: Gate 4: Source Start of commercial production 2011-07 1 2014-04-04 Rev.2.0 SSM6J215FE 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 Drain current (DC) (Note 1) ID -3.4 A Drain current (pulsed) (Note 1),(Note 2) IDP -10 Power dissipation (Note 2) PD 500 mW Power dissipation (t = 10 s) (Note 2) PD 700 mW Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report a...