SSM3J132TU

MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J132TU 1. Applications Power Management Switches 2. Features (1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 94 mΩ (max) (VGS = -1.2 V) RDS(ON) = 39 mΩ (max) (VGS = -1.5 V) RDS(ON) = 29 mΩ (max) (VGS = -1.8 V) RDS(ON) = 21 mΩ (max) (VGS = -2.5 V) RDS(ON) = 17 mΩ (max) (VGS = -4.5 V) 3. Packaging and Internal Circuit UFM SSM3J132TU 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2011-02 2021-10-22 Rev.1.0 SSM3J132TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±6 V Drain current (DC) (Note 1) ID -5.4 A Drain current (pulsed) (Note 1), (Note 2) IDP -10.8 Power dissipation Power dissipation t≤1s (Note 3) PD (Note 3) 500 mW 1000 Channel temperature Storage temperature Tch 150 � Tstg -55 to 150 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and ...