Document
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
Rev. 2 — 29 January 2013 Objective data sheet
1. Product profile
1.1 General description
CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 1-Tone CW f (MHz) 500 1000 1500 2000 1-Tone pulsed [1] 500 1000 1500 2000
[1] Pulsed RF; tp = 50 s; = 1 %.
PL (W) 100 100 100 100 100 100 100 100
Gp (dB) 14.2 11.2 10.8 11.7 15.5 14 14.3 13.9
D (%) 61.6 47.9 46.4 53.3 67.4 52.9 53.7 59.5
Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 500 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 2-Tone CW
[1]
f (MHz) 300 1000 1500 2000
PL(PEP) (W) 20 20 20 20
IMD3 (dBc) 45.5 39.3 44 46.4
[1]
2-Tone CW; f = 1 MHz.
1.2 Features and benefits
Frequency of operation is from DC to 3.5 GHz 100 W general purpose broadband RF Power GaN HEMT
NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
Excellent ruggedness (VSWR 10 : 1) High voltage operation (50 V) Thermally enhanced package
1.3 Applications
Commercial wireless infrastructure (cellular, WiMAX) Radar Broadband general purpose amplifier Public mobile radios Industrial, scientific, medical Jammers EMC testing Defense application
2. Pinning information
Table 3. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
CLF1G0035-100 (SOT467C)
1 3 2
DDD
CLF1G0035S-100 (SOT467B) 1 2 3 drain gate source
[1]
1 3 2
DDD
[1]
Connected to flange.
3. Ordering information
Table 4. Ordering information Package Name CLF1G0035-100 CLF1G0035S-100 Description earless ceramic package; 2 leads Version SOT467B flanged ceramic package; 2 mounting holes; 2 leads SOT467C Type number
CLF1G0035-100_1G0035S-100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
2 of 20
NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
4. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS IGF Tstg Tj Parameter drain-source voltage gate-source voltage forward gate current storage temperature junction temperature measured via IR scan external RG = 5 Conditions Min 8 65 Max 150 +3 36 +150 250 Unit V V mA C C
5. Thermal characteristics
Table 6. Symbol Rth(j-c)
[1]
Thermal characteristics Parameter thermal resistance from junction to case Conditions Tj = 200 C
[1]
Typ 1.02
Unit K/W
Tj is measured via IR scan with case temperature of 85 C and power dissipation of 113 W.
6. Characteristics
Table 7. DC Characteristics Tcase = 25 C; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSX gfs gate-source threshold voltage drain cut-off current forward transconductance Conditions VGS = 7 V; IDS = 24 mA VDS = 0.1 V; IDS = 24 mA VDS = 10 V; VGS = 3 V VDS = 10 V; VGS = 0 V Min 150 2.4 Typ 2 17 3.9 Max 1.3 Unit V V A S
Table 8. RF Characteristics Test signal: pulsed RF; tp = 100 s; = 10 %; RF performance at VDS = 50 V; IDq = 330 mA; Tcase = 25 C; unless otherwise specified in a class-AB production circuit. Symbol f D Gp RLin tr tf Parameter frequency drain efficiency power gain input return loss rise time fall time PL = 100 W PL = 100 W PL = 100 W PL = 100 W PL = 100 W PL = 100 W Conditions Min 3 Typ 47 10 6 0.04 5 5 Max 3.5 Unit GHz % dB dB dB ns ns
Pdroop(pulse) pulse droop power
CLF1G0035-100_1G0035S-100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Objective data sheet
Rev. 2 — 29 January 2013
3 of 20
NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
7. Application information
7.1 Demo circuit
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Fig 1.
The broadband amplifier (200 MHz to 2100 MHz) demo circuit outline
Table 9. List of components See Figure 1 and Figure 2. Component A1 C1 C3 C4 C5, C6 C7 C9 C10 C11 C12 C13 C20 C21
CLF1G0035-100_1G0035S-100
Description GaN bias module v2 multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor m.