Document
SemiWell Semiconductor
MCR100-8
Symbol
2. Gate
○ ○
Sensitive Gate Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 0.8 A ) ◆ Low On-State Voltage (1.2V(Typ.)@ ITM)
◆
▼
1 23
○
3. Anode
1. Cathode
TO-92
General Description
Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition Ratings
600 Half Sine Wave : TC = 74 °C All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TA =25°C, Pulse Width ≤ 1.0㎲ TA =25°C, t = 8.3ms 0.5 0.8 10 0.415 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Units
V A A A A2 s W W A V °C °C
Oct, 2002. Rev. 2
Information offers: http://www.kkg.com.cn
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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MCR100-8
Electrical Characteristics
Symbol Items
( TC = 25 °C unless otherwise noted )
Conditions
VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 125 °C ( ITM = 1 A, Peak ) VAK = 6 V, RL=100 Ω
Ratings Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)
─ ─ ─
─ ─ 1.2
10 200 1.7
㎂
VTM
V
IGT
Gate Trigger Current (2)
TC = 25 °C TC = - 40 °C VD = 7 V, RL=100 Ω
─ ─
─ ─
200 500
㎂
VGT
Gate Trigger Voltage (2)
TC = 25 °C TC = - 40 °C VAK = 12 V, RL=100 Ω VD = 0.67 VDRM , Exponential waveform, TJ=125°C ITM = 2A ; Ig = 10mA VAK = 12 V, Gate Open Initiating Curent = 50mA TC = 25 °C TC = - 40 °C Junction to case Junction to Ambient RGK = 1000 Ω TC = 125 °C
─ ─ 0.2
─ ─ ─
0.8 1.2 ─
V
VGD
Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage Critical Rate of Rise On-State Current
V
dv/dt
500
800
─
V/㎲
di/dt
─
─
50
A/㎲
IH
Holding Current
─ ─ ─ ─
2 ─ ─ ─
5.0 10 60 150
mA
Rth(j-c) Rth(j-a)
Thermal Impedance Thermal Impedance
°C/W °C/W
※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. Does not include RGK in measurement.
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Information offers: http://www.kkg.com.cn
MCR100-8
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
140
10
1
Max. Allowable Case Temperature [ C]
120
VGM(5V) PGM(2W)
o
100
Gate Voltage [V]
PG(AV)(0.1W) IGM(1A)
10
0
80
θ = 180
o
60
π θ
2π
25 C
o
40
360°
20
VGD(0.2V)
10
-1
θ
: Conduction Angl e
10
0
10
1
10
2
10
3
10
4
0 0.0
0.1
0.2
0.3
0.4
0.5
0.6
Gate Current [mA]
Average On-State Current [A]
Fig 3. Typical Forward Voltage
10
1
Fig 4. Thermal Response
10
3
Transient Thermal Impedance [ C/W]
o
On-State Cur.