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MCR100-8 Dataheets PDF



Part Number MCR100-8
Manufacturers SemiWell
Logo SemiWell
Description Sensitive Gate Silicon Controlled Rectifiers
Datasheet MCR100-8 DatasheetMCR100-8 Datasheet (PDF)

SemiWell Semiconductor MCR100-8 Symbol 2. Gate ○ ○ Sensitive Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 0.8 A ) ◆ Low On-State Voltage (1.2V(Typ.)@ ITM) ◆ ▼ 1 23 ○ 3. Anode 1. Cathode TO-92 General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings Symbol.

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SemiWell Semiconductor MCR100-8 Symbol 2. Gate ○ ○ Sensitive Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 0.8 A ) ◆ Low On-State Voltage (1.2V(Typ.)@ ITM) ◆ ▼ 1 23 ○ 3. Anode 1. Cathode TO-92 General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 Half Sine Wave : TC = 74 °C All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TA =25°C, Pulse Width ≤ 1.0㎲ TA =25°C, t = 8.3ms 0.5 0.8 10 0.415 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 150 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Units V A A A A2 s W W A V °C °C Oct, 2002. Rev. 2 Information offers: http://www.kkg.com.cn Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. 1/5 MCR100-8 Electrical Characteristics Symbol Items ( TC = 25 °C unless otherwise noted ) Conditions VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 125 °C ( ITM = 1 A, Peak ) VAK = 6 V, RL=100 Ω Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current Peak On-State Voltage (1) ─ ─ ─ ─ ─ 1.2 10 200 1.7 ㎂ VTM V IGT Gate Trigger Current (2) TC = 25 °C TC = - 40 °C VD = 7 V, RL=100 Ω ─ ─ ─ ─ 200 500 ㎂ VGT Gate Trigger Voltage (2) TC = 25 °C TC = - 40 °C VAK = 12 V, RL=100 Ω VD = 0.67 VDRM , Exponential waveform, TJ=125°C ITM = 2A ; Ig = 10mA VAK = 12 V, Gate Open Initiating Curent = 50mA TC = 25 °C TC = - 40 °C Junction to case Junction to Ambient RGK = 1000 Ω TC = 125 °C ─ ─ 0.2 ─ ─ ─ 0.8 1.2 ─ V VGD Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage Critical Rate of Rise On-State Current V dv/dt 500 800 ─ V/㎲ di/dt ─ ─ 50 A/㎲ IH Holding Current ─ ─ ─ ─ 2 ─ ─ ─ 5.0 10 60 150 mA Rth(j-c) Rth(j-a) Thermal Impedance Thermal Impedance °C/W °C/W ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. Does not include RGK in measurement. 2/5 Information offers: http://www.kkg.com.cn MCR100-8 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature 140 10 1 Max. Allowable Case Temperature [ C] 120 VGM(5V) PGM(2W) o 100 Gate Voltage [V] PG(AV)(0.1W) IGM(1A) 10 0 80 θ = 180 o 60 π θ 2π 25 C o 40 360° 20 VGD(0.2V) 10 -1 θ : Conduction Angl e 10 0 10 1 10 2 10 3 10 4 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Gate Current [mA] Average On-State Current [A] Fig 3. Typical Forward Voltage 10 1 Fig 4. Thermal Response 10 3 Transient Thermal Impedance [ C/W] o On-State Cur.


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