Controlled Rectifiers. MCR100-8 Datasheet

MCR100-8 Rectifiers. Datasheet pdf. Equivalent

Part MCR100-8
Description Sensitive Gate Silicon Controlled Rectifiers
Feature SemiWell Semiconductor MCR100-8 Symbol 2. Gate ○ ○ Sensitive Gate Silicon Controlled Rectifiers Fe.
Manufacture SemiWell
Datasheet
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MCR100-8
SemiWell Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 0.8 A )
Low On-State Voltage (1.2V(Typ.)@ ITM)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
MCR100-8
Symbol
3. Anode
2. Gate
1. Cathode
TO-92
123
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Half Sine Wave : TC = 74 °C
All Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA =25°C, Pulse Width 1.0
TA =25°C, t = 8.3ms
Ratings
600
0.5
0.8
10
0.415
2
0.1
1
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
Oct, 2002. Rev. 2
Information offers: http://www.kkg.com.cn
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
1/5



MCR100-8
MCR100-8
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VAK = VDRM or VRRM ; RGK = 1000 Ω
TC = 25 °C
TC = 125 °C
10
200
VTM Peak On-State Voltage (1)
( ITM = 1 A, Peak )
1.2 1.7 V
IGT Gate Trigger Current (2)
VAK = 6 V, RL=100 Ω
TC = 25 °C
TC = - 40 °C
200
500
VGT Gate Trigger Voltage (2)
VD = 7 V, RL=100 Ω
TC = 25 °C
TC = - 40 °C
0.8 V
1.2
VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ─ ─ V
dv/dt
Critical Rate of Rise Off-State
Voltage
VD = 0.67 VDRM ,
Exponential waveform,
TJ=125°C
RGK = 1000 Ω
500 800
V/
Critical Rate of Rise On-State
di/dt Current
ITM = 2A ; Ig = 10mA
─ ─ 50 A/
IH Holding Current
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
VAK = 12 V, Gate Open
Initiating Curent = 50mA
TC = 25 °C
TC = - 40 °C
Junction to case
Junction to Ambient
Notes :
1. Pulse Width 1.0 ms , Duty cycle 1%
2. Does not include RGK in measurement.
2 5.0 mA
10
60 °C/W
150 °C/W
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