SCRs. MCR100-8 Datasheet

MCR100-8 SCRs. Datasheet pdf. Equivalent

Part MCR100-8
Description SCRs
Feature TM MCR100-8 SCRs HPM HAOPIN MICROELECTRONICS CO.,LTD. Description Glass passivated, sensitive ga.
Manufacture HAOPIN
Datasheet
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MCR100-8
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
MCR100-8
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose
switching and phase control applications. These devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Symbol
Simplified outline
a
Pin
1
2
3
TAB
k
g
123
TO-92
Description
Cathode
anode
gate
anode
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
RMS on-state current full sine wave
Non-repetitive peak on-state current
(full cycle,Tj initial=25 )
Applications:
Motor control
Industrial and domestic lighting
Heating
Static switching
Features
Blocking voltage to 600 V
On-state RMS current to 0.8 A
Ultra low gate trigger current
Value
600
0.8
10
Unit
V
A
A
SYMBOL
R JC
R JA
TL
PARAMETER
Thermal resistance,Junction to Case
Junction to Ambient
Lead Solder Temperature
CONDITIONS
<1/16 from case,10
secs max
MIN
-
-
TYP
-
260
MAX
75
200
-
UNIT
/W
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¼



MCR100-8
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
MCR100-8
SCRs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
V VDRM, RRM
IT(RMS)
Peak repetitive off-state
Voltages
RMS on-state current 180
CONDITIONS
Tj = -40 to 110 sine wave
50 to 60 Hz gate open
conduction angles
MCR100-6
MCR100-8
Tc =80
MIN
-
-
ITSM
Peak non-repetitive
surge current
1/2cycle,sine
wave,60Hz,Tj=25
-
I2t circuit fusing consideration
t=8.3ms
-
I ,IDRM RRM
Peak repetitive forward
or reverse blocking
current
VD=rated VDRM and VRRM;
RGK=1k
Tc =25
Tc =110
-
-
MAX
400
600
0.8
UNIT
V
A
10 A
0.415
A2S
10 A
100 A
IGFM
VGRM
PGM
P G(AV)
Tstg
TJ
Forward peak gate curren
Reverse peak gate voltage
Forward peak gate power
Forward average gate power
Storage temperature range
TA=25 ,Pulse Width<=1.0
TA=25 ,Pulse Width<=1.0
TA=25 ,Pulse Width<=1.0
TA=25 , t=8.3ms
s
s
s
Operating junction temperature range @ rate V aRRM nd VDRM
-1A
-5V
- 0.1 W
-
0.01
W
-40 150
-40 125
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
IGT
Gate trigger current
V =AK 7.0Vdc,RL=100
MIN TYP MAX UNIT
Tc =25
- 40 200 A
IL Latch current
V =AK 7.0V,lg=200 A
Tc =25
Tc =-40
IH
Holding current
VAK=7.0Vdc,lnitiating Current=20mA
Tc=25
Tc=-40
VTM
Peak forward on-state voltage
I =TM 1.0A Peak;@TA=25
Gate trigger voltage
V =AK 7.0Vdc,RL=100
VGT Tc=25
Tc=-40
Dynamic Characteristics
dv/dt
di/dt
Critical rate of rise of
off-state voltage
Critical rate-of-rise of
on-state current
VD=Rated V ,DRM Exponential
Waveform,R =GK 1k
Tj=110
I =PK 20A;PW=10 sec;
diG/dt=1A/ sec,lgt=20mA
- 0.6 10 mA
- - 15 mA
- 0.5 5.0 mA
- - 10 mA
- - 1.7
- 0.62 0.8
- - 1.2
V
V
V
20 35
- V/ s
- - 50 A/ s
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