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NSI50150ADT4G Dataheets PDF



Part Number NSI50150ADT4G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Adjustable Constant Current Regulator & LED Driver
Datasheet NSI50150ADT4G DatasheetNSI50150ADT4G Datasheet (PDF)

DATA SHEET www.onsemi.com Adjustable Constant Current Regulator & LED Driver 50 V, 150 − 350 mA + 10%, 4.2 W Package NSI50150ADT4G The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs. The CCR is based on Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway.

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DATA SHEET www.onsemi.com Adjustable Constant Current Regulator & LED Driver 50 V, 150 − 350 mA + 10%, 4.2 W Package NSI50150ADT4G The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs. The CCR is based on Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 14% of regulation with only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher currents by attaching a resistor between Radj (Pin 3) and the Cathode (Pin 4). The Radj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low−side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package and is qualified to stringent AEC−Q101 standard, which is lead-free RoHS compliant and uses halogen-free molding compound. Features • Robust Power Package: 4.2 Watts • Adjustable up to 350 mA • Wide Operating Voltage Range • Immediate Turn-On • Voltage Surge Suppressing − Protecting LEDs • UL94−V0 Certified • SBT (Self−Biased Transistor) Technology • Negative Temperature Coefficient • Eliminates Additional Regulation • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Automobile: Chevron Side Mirror Markers, Cluster, Display & Instrument Backlighting, CHMSL, Map Light • AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering • Application Notes AND8391/D, AND9008/D − Power Dissipation Considerations • Application Note AND8349/D − Automotive CHMSL Ireg(SS) = 150 − 350 mA @ Vak = 7.5 V Anode 1 3 Radj 4 Cathode 4 12 3 DPAK CASE 369C MARKING DIAGRAM 1 A YWW NSI C Radj 150G Y = Year WW = Work Week NSI150 = Specific Device Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NSI50150ADT4G DPAK 2500/Tape & Reel (Pb−Free) NSV50150ADT4G DPAK 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 1 April, 2022 − Rev. 2 Publication Order Number: NSI50150AD/D NSI50150ADT4G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Anode−Cathode Voltage Vak Max 50 V Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model VR TJ, Tstg ESD 500 mV −55 to +175 °C Class 3B (8000 V) Class C (400 V) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Steady State Current @ Vak = 7.5 V (Note 1) Ireg(SS) 135 150 165 mA Voltage Overhead (Note 2) Voverhead 1.8 V Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) 140.5 158 175.35 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 170 sec, using FR−4 @ 1000 mm2 3 oz. Copper traces, in still air. 2. Voverhead = Vin − VLEDs. Voverhead is typical value for 48% Ireg(SS). 3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 1 msec. Figure 1. CCR Voltage−Current Characteristic www.onsemi.com 2 NSI50150ADT4G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 4) TA = 25°C Derate above 25°C Symbol PD Thermal Resistance, Junction−to−Ambient (Note 4) Thermal Resistance, Junction−to−Tab (Note 4) Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C RθJA RψJ−TAB PD Thermal Resistance, Junction−to−Ambient (Note 5) Thermal Resistance, Junction−to−Tab (Note 5) Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C RθJA RψJ−TAB PD Thermal Resistance, Junction−to−Ambient (Note 6) Thermal Resistance, Junction−to−Tab (Note 6) Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C RθJA RψJ−TAB PD Thermal Resistance, Junction−to−Ambient (Note 7) Thermal Resistance, Junction−to−T.


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