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DATA SHEET www.onsemi.com
Adjustable Constant Current Regulator & LED Driver
50 V, 150 − 350 mA + 10%, 4.2 W Package
NSI50150ADT4G
The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs. The CCR is based on Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents.
The CCR turns on immediately and is at 14% of regulation with only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher currents by attaching a resistor between Radj (Pin 3) and the Cathode (Pin 4). The Radj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low−side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package and is qualified to stringent AEC−Q101 standard, which is lead-free RoHS compliant and uses halogen-free molding compound.
Features
• Robust Power Package: 4.2 Watts • Adjustable up to 350 mA • Wide Operating Voltage Range • Immediate Turn-On • Voltage Surge Suppressing − Protecting LEDs • UL94−V0 Certified • SBT (Self−Biased Transistor) Technology • Negative Temperature Coefficient • Eliminates Additional Regulation • NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automobile: Chevron Side Mirror Markers, Cluster, Display &
Instrument Backlighting, CHMSL, Map Light
• AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
• Application Notes AND8391/D, AND9008/D − Power Dissipation
Considerations
• Application Note AND8349/D − Automotive CHMSL
Ireg(SS) = 150 − 350 mA @ Vak = 7.5 V
Anode 1
3 Radj
4 Cathode
4
12 3
DPAK CASE 369C
MARKING DIAGRAM
1
A
YWW
NSI
C
Radj
150G
Y
= Year
WW = Work Week
NSI150 = Specific Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NSI50150ADT4G DPAK 2500/Tape & Reel (Pb−Free)
NSV50150ADT4G DPAK 2500/Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
April, 2022 − Rev. 2
Publication Order Number: NSI50150AD/D
NSI50150ADT4G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Anode−Cathode Voltage
Vak Max
50
V
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating:
Human Body Model Machine Model
VR TJ, Tstg
ESD
500
mV
−55 to +175
°C
Class 3B (8000 V) Class C (400 V)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Steady State Current @ Vak = 7.5 V (Note 1)
Ireg(SS)
135
150
165
mA
Voltage Overhead (Note 2)
Voverhead
1.8
V
Pulse Current @ Vak = 7.5 V (Note 3)
Ireg(P)
140.5
158
175.35 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 170 sec, using FR−4 @ 1000 mm2 3 oz. Copper traces, in still air. 2. Voverhead = Vin − VLEDs. Voverhead is typical value for 48% Ireg(SS). 3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 1 msec.
Figure 1. CCR Voltage−Current Characteristic
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NSI50150ADT4G
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation (Note 4) TA = 25°C Derate above 25°C
Symbol PD
Thermal Resistance, Junction−to−Ambient (Note 4) Thermal Resistance, Junction−to−Tab (Note 4) Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C
RθJA RψJ−TAB
PD
Thermal Resistance, Junction−to−Ambient (Note 5) Thermal Resistance, Junction−to−Tab (Note 5) Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C
RθJA RψJ−TAB
PD
Thermal Resistance, Junction−to−Ambient (Note 6) Thermal Resistance, Junction−to−Tab (Note 6) Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C
RθJA RψJ−TAB
PD
Thermal Resistance, Junction−to−Ambient (Note 7) Thermal Resistance, Junction−to−T.