N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2602GY
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ ...
Description
AP2602GY
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS Compliant SOT-26
D D D D G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 34mΩ 6.3A
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current
1,2 3 3
Rating 20 ±12 6.3 5 30 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
200629051-1/4
AP2602GY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 20 0.5 -
Typ. 0.1 13 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111
Max. Units 30 34 50 90 1 10 ±100 16 1085 V V/℃ mΩ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature C...
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