AP2609GYT-HF

AP2609GYT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID D -20V 18mΩ -11.3A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK® 3x3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink. S S D D D S G PMPAK ® 3x3 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 +8 -11.3 -9 -40 3.57 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 6 35 Unit ℃/W ℃/W 1 201102101 Data and specifications subject to change without notice AP2609GYT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-7A VGS=-2.5V, ID=-5A VGS=-1.8V, ID=-2A Min. -20 - Typ. 15 18 23 25 26.5 2.3 7 10 17 90 75 305 290 ...