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B1431

NEC

PNP Silicon Epitaxial Transistor

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NEC

B1431

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'$7$ 6+((7 6,/,&21 32:(5 75$16,6725 6% 313 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 )25 /2:)5(48(1&< 32:(5 $03/,),(56 $1' /2:63((' 6:,7&+,1* The 2SB1431 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWING (UNIT: mm) FEATURES High hFE due to Darlington connection: hFE ≥ 2,000 (VCE = −2 V, IC = −3 A) Mold package that does not require an insulating board or insulation bushing QUALITY GRADES Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. (OHFWURGH &RQQHFWLRQ  %DVH  &ROOHFWRU  (PLWWHU (48,9$/(17 &,5&8,7 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings −100 −100 −7.0 −8.0 −12 −0.8 25 2.0 150 −55 to +150 Unit V V V A A A W W °C °C * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is s...




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