LMBTA64LT1G

LESHAN RADIO COMPANY, LTD. Darlington Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol VCES VCBO VEBO IC Value –30 –30 –10 –500 Unit Vdc Vdc Vdc mAdc LMBTA63LT1G LMBTA64LT1G 3 1 2 DEVICE MARKING LMBTA63LT1G = 2U; LMBTA64LT1G = 2V CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C EMITTER 2 COLLECTOR 3 BASE 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –100 µAdc) Collector Cutoff Current (VCB = –30 Vdc) Emitter Cutoff Current (VEB = –10 Vdc) V(BR)CEO ICBO IEBO hFE LMBTA63LT1G LMBTA64LT1G LMBTA63LT1G LMBTA64LT1G VCE(sat) VBE(on) fT 5,000 10,000 10,000 20,000 – – – – – – –1.5 –2.0 Vdc Vdc –30 – – – –100 –100 Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain(3) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –100 mAdc, VCE = –5.0 Vdc) (IC = –100 mAdc, VCE = –5.0 Vdc) – Colle...