SSM6J503NU

SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J503NU Power Management Switch Applications 1.5V drive Low ON-resistance: RDS(ON)= 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 41.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.4 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS −20 V Gate-Source voltage VGSS ±8 V Drain current DC ID −6.0 A Pulse IDP (Note 1) -24.0 Power Dissipation PD (Note 2) 1 W t ≦10s 2 Channel temperature Storage temperature Tch 150 °C Tstg −55 to 150 °C 1,2,5,6: Drain 3: Gate Note: Using continuously under heavy loads (e.g. the application of UDFN6B 4: Source high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA ― operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2AA1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 8.5 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The pulse width limited by max channel temperature. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, ...