SSM6K31FE

SSM6K31FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K31FE ○ High speed switching ○ DC-DC Converter : mm 4-V drive Low RDS (ON): R DS (ON) = 320 mΩ (max) (@VGS = 10 V) : R DS (ON) = 540 mΩ (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 20 V VGSS ±20 V ID 1.2 A IDP 2.4 PD(Note 1) 500 mW Tch 150 °C Tstg −55 to 150 °C 1,2,5,6: Drain 3: Gate 4: Source JEDEC ― JEITA ― Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2N1J high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 3 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm (t), Cu pad: 645 mm2) Marking 654 Equivalent Circuit (top view) 654 KB 123 123 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board),...