SSM6J505NU

MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J505NU 1. Applications Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J505NU 1.2.5.6 Drain 3. Gate 4. Source ©2018-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-05 2021-09-17 Rev.5.0 SSM6J505NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±6 Drain current (DC) (Note 1) ID -12 A Drain current (pulsed) (Note 1),(Note 2) IDP -30 Power dissipation Power dissipation Channel temperature (Note 3) PD t ≤ 10 s (Note 3) PD Tch 1.25 W 2.5 W 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derati...