N-Channel MOSFET
SSM4800AGM
N-Channel Enhancement Mode P Power Mosfet
P
D D D G S D
PRODUCT SUMMARY
Simple Drive Requirement Low On-re...
Description
SSM4800AGM
N-Channel Enhancement Mode P Power Mosfet
P
D D D G S D
PRODUCT SUMMARY
Simple Drive Requirement Low On-resistance Fast Switching Characteristic RoHS Compliant
BVDSS RDS(ON) ID
S
30V 18mΩ 9.4A
SO-8
S
DESCRIPTION
The Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±25 9.4 7.5 40 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THERMAL Thermal DATA Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit ℃/W
02/09/2007 Rev.1.00
D
www.SiliconStandard.com
2
1
SSM4800AGM
ELECTRICAL CHARACTERISTICS
J Electrical Characteristics@Tj=25oC(unless otherwise specified)
@T = 25 C ( unless otherwise specified )
o
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 30 1 -
Typ. 0.02 14 18 16 7 1 4.5 7 8 18 8 420 210 70...
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