P-channel MOSFET
SSM4835M
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple drive requirement Low on-resistance Fast switching
G D D D
D
B...
Description
SSM4835M
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple drive requirement Low on-resistance Fast switching
G D D D
D
BV DSS R DS(ON) ID
S
-30V 20mΩ -8A
SO-8
S
S
Description
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1,2 3 3
Rating -30 ±25 -8 -6 -50 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Continuous Drain Current Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit ℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
1 of 6
SSM4835M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min. Typ. Max. Units -30 -1 -0.037
20 35 -3 -1 -25 ±100 -
V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-8A...
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