SSM4435M

SSM4435M P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Low on-resistance D D D D BVDSS R DS(ON) ID G S -30V 20mΩ -8A Fast switching SO-8 S S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS I D @ TA=25°C I D @ TA=70°C I DM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 30 ± 20 -8 -6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit °C/W Rev.2.02 4/18/2004 www.SiliconStandard.com 1 of 6 SSM4435M Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.037 20 35 -3 -1 -25 ±100 - V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA Static Drain-Source On...