AO9926E

AO9926E Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO9926E is Pb-free (meets ROHS & Sony 259 specifications). AO9926EL is a Green Product ordering option. AO9926E and AO9926EL are Features VDS (V) = 20V ID = 8A (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 4.5V) RDS(ON) < 25mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 8 6.4 30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO9926E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS...