P-Channel MOSFET
AP4423GM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast...
Description
AP4423GM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
SO-8
D D D D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
S S S G
-30V 15mΩ -11A
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -30 +25 -11 -8.7 -50 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201106213
Data and specifications subject to change without notice
AP4423GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=-250uA
Min. -30 -1 -
Typ. -0.02 12 20 17 27 3 20 15 12 40 25 530 440 2.9
Max. Units 15 25 -3 -1 -25 +100 43 4.5 V V/℃ mΩ...
Similar Datasheet