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AP4425GM Dataheets PDF



Part Number AP4425GM
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-Channel MOSFET
Datasheet AP4425GM DatasheetAP4425GM Datasheet (PDF)

AP4425GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G 35V 9mΩ 13A ▼ RoHS Compliant SO-8 S S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount app.

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AP4425GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G 35V 9mΩ 13A ▼ RoHS Compliant SO-8 S S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 35 +20 13 10 52 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 200811032 AP4425GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=1mA Min. 35 0.8 - Typ. 0.03 23 23 3.7 15 11 8 31 15 360 315 0.9 Max. Units 9 13 2.3 1 25 +100 37 1.35 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=6.5A VGS=4.5V, ID=6.5A VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Drain-Source Leakage Current (Tj=70 C) VDS=30V, VGS=0V Gate-Source Leakage Total Gate Charge 2 VGS=+20V ID=10A VDS=24V VGS=4.5V VDS=20V ID=1A RG=3.3Ω,VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1300 2080 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=1.9A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. - Typ. 205 360 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER IT.


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