AM4835P

Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability Extended VGS range (±25) for battery pack applications o AM4835P PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 19 @ VGS = -10V -30 30 @ VGS = -4.5V ID (A) -9.5 -7.5 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter -30 Drain-Source Voltage VDS V VGS ±25 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a a TA=25 C TA=70 C o o ID IDM IS -9.5 -8.3 ±50 -2.1 3.1 2.6 -55 to 150 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Case a Maximum Junction-to-Ambient a Symbol t <= 5 sec RθJC RθJA Maximum 25 50 Units o o t <= 10 sec C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction te...