N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP6800GEO
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ O...
Description
AP6800GEO
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Optimal DC/DC battery application ▼ RoHS compliant
D2 S2 G2 S2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
S1 D1 G1 S1
20V 20mΩ 6
TSSOP-8
ID
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 G1 G2 D2
S1
S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , VGS @ 4.5V Drain Current , VGS @ 4.5V Pulsed Drain Current
1 3 3
Rating 20 ±10 6.0 4.7 30 1 0.008 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 125
Unit ℃/W
Data and specifications subject to change without notice
200109061-1/4
AP6800GEO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=6A VGS=4V, ID=4A VGS=2.5V, ID=2A
Min. 20 0.5 -
Typ. 0.02 6 23.4 2.5 11.1 8.2 18.4 19.6 58 580 315 165 2
Max. Units 20 21 25 1.2 1 25 ±30 37 930 3 V V/℃ mΩ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF ...
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