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AP9576GH-HF-3 Dataheets PDF



Part Number AP9576GH-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9576GH-HF-3 DatasheetAP9576GH-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP9576GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Lower On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -60V 100mΩ -14A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9576GH-HF-3 is in the TO-252 package, which is widely used for commercial and industrial surface-moun.

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Advanced Power Electronics Corp. AP9576GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Lower On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -60V 100mΩ -14A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9576GH-HF-3 is in the TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP9576GJ-HF-3 is in the TO-251 through-hole package which is used where a small PCB footprint or an attached heatsink is required. G D S D (tab) TO-252 (H) D (tab) G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=100°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -60 ±20 -14 -9 -45 36.8 0.29 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB Mount)3 Value 3.4 62.5 110 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP9576GH-HF-3TR : in RoHS-compliant halogen-free TO-252, shipped on tape and reel (3000 pcs/reel) AP9576GJ-HF-3TB : in RoHS-compliant halogen-free TO-251, shipped in tubes (80pcs/tube) ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 200902092-3 1/6 Advanced Power Electronics Corp. AP9576GH/J-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -60 -0.8 - Typ. -0.06 6 14 3 6 8 18 32 56 120 90 Max. Units - V V/°C ∆ BV DSS /∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25 °C , ID=-1mA Static Drain-Source On-Resistance VGS= -10V, ID=-10A VGS= -4.5V, ID=-8A 100 120 -3 -10 -250 ±100 22 - mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=125 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS=±20V, VDS=0V ID=--10A VDS=-48V VGS=-4.5V VDS=-30V ID=-10A RG=3.3Ω , VGS=-10V RD= 3Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1170 1880 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS= -10A, VGS=0V IS=-10A, VGS=0V dI/dt=-100A/µs Min. - Typ. 39 59 Max. Units -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area 2.Pulse test - pulse width < 300µs, duty cycle < 2% 3.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/6 Advanced Power Electronics Corp. Typical Electrical Characteristics 30 30 AP9576GH/J-HF-3 -10V -7.0V -5.0V -4.5V V G = -3.0 V T C = 25 C -ID , Drain Current (A) o 20 -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V V G = -3.0 V T C = 150 o C 20 10 10 0 0 2 4 6 8 10 12 0 0 2 4 6 8 10 12 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 2.0 Fig 2. Typical Output Characteristics ID=-8A T C =25 C Normalized RDS(ON) 95 1.6 o I D = - 10 A V G = - 10V RDS(ON) (mΩ ) 90 1.2 85 0.8 80 2 4 6 8 10 0.4 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance vs. Gate Voltage 4 Fig 4. Normalized On-Resistance vs. Junction Temperature 2.0 3 Normalized -VGS(th) (V) 1.2 1.5 -IS(A) 2 T j =150 o C T j =25 o C 1.0 1 0.5 0 0.0 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/6 Adva.


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