Document
Advanced Power Electronics Corp.
AP9576GH/J-HF-3
P-channel Enhancement-mode Power MOSFET
Lower On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS-compliant, halogen-free
D
BV DSS RDS(ON)
G S
-60V 100mΩ -14A
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9576GH-HF-3 is in the TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP9576GJ-HF-3 is in the TO-251 through-hole package which is used where a small PCB footprint or an attached heatsink is required.
G D S
D (tab) TO-252 (H)
D (tab)
G D S
TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=100°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -60 ±20 -14 -9 -45 36.8 0.29 -55 to 150 -55 to 150
Units V V A A A W W/ °C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB Mount)3
Value 3.4 62.5 110
Unit °C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
Ordering Information
AP9576GH-HF-3TR : in RoHS-compliant halogen-free TO-252, shipped on tape and reel (3000 pcs/reel) AP9576GJ-HF-3TB : in RoHS-compliant halogen-free TO-251, shipped in tubes (80pcs/tube)
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
AP9576GH/J-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA
2
Min. -60 -0.8 -
Typ. -0.06 6 14 3 6 8 18 32 56 120 90
Max. Units -
V
V/°C
∆ BV DSS /∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25 °C , ID=-1mA
Static Drain-Source On-Resistance
VGS= -10V, ID=-10A VGS= -4.5V, ID=-8A
100 120 -3 -10 -250 ±100 22 -
mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125 C)
o
VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS=±20V, VDS=0V ID=--10A VDS=-48V VGS=-4.5V VDS=-30V ID=-10A RG=3.3Ω , VGS=-10V RD= 3Ω VGS=0V VDS=-25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
1170 1880
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS= -10A, VGS=0V IS=-10A, VGS=0V dI/dt=-100A/µs
Min. -
Typ. 39 59
Max. Units -1.2 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area 2.Pulse test - pulse width < 300µs, duty cycle < 2%
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics
30 30
AP9576GH/J-HF-3
-10V -7.0V -5.0V -4.5V V G = -3.0 V
T C = 25 C -ID , Drain Current (A)
o
20
-ID , Drain Current (A)
-10V -7.0V -5.0V -4.5V V G = -3.0 V
T C = 150 o C
20
10
10
0 0 2 4 6 8 10 12
0 0 2 4 6 8 10 12
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100 2.0
Fig 2. Typical Output Characteristics
ID=-8A T C =25 C Normalized RDS(ON)
95 1.6
o
I D = - 10 A V G = - 10V
RDS(ON) (mΩ )
90
1.2
85
0.8
80
2 4 6 8 10
0.4 -50 0 50 100 150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
4
Fig 4. Normalized On-Resistance vs. Junction Temperature
2.0
3
Normalized -VGS(th) (V)
1.2
1.5
-IS(A)
2
T j =150 o C
T j =25 o C
1.0
1
0.5
0
0.0 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150
-V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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Adva.