P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9578GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ F...
Description
AP9578GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-60V 160mΩ -10A
Description
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9578GJ) is available for low-profile applications.
G D S G D S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -60 +25 -10 -6 -45 28 0.23 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 4.5 62.5 110
Units ℃/W ℃/W ℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1 200807172
AP9578GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=-250uA
Min. -60 -1 -
Typ. -0.06 6 10 2 4...
Similar Datasheet