Document
S T M7822A
S amHop Microelectronics C orp. Arp,20 2005 ver1.1
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
25V
F E AT UR E S
( m W ) Max
ID
14A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
7 @ V G S = 10V 9 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
S O-8 1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T c=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol Vspike V DS V GS ID IDM IS PD T J , T S TG
d
Limit 30 25 16 14 56 14 2.5 -55 to 150
Unit V V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 50 C /W
1
S T M7822A
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c
Condition
V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 14A V GS =4.5V, ID= 10A V DS = 10V, V GS = 10V V DS = 10V, ID = 14A
Min Typ C Max Unit
25 1 V uA 100 nA 0.7 1.2 6 8 10 28 3640 550 420 2.0 7 9 V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance Output Capacitance R everse Transfer Capacitance
C IS S C OS S CRSS
c
V DS =16V, V GS = 0V f =1.0MH Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Q gs Q gd
2
V DD = 16V, ID = 14A, V GS = 5V, R GE N = 6 ohm V DS =16V, ID =14A,V GS =10V V DS =16V, ID =14A,V GS =5V V DS =16V, ID = 14A, V GS =5V
12.3 10.2 23.8 12.1 73.9 36.2 11.5 9.9
ns ns ns ns nC nC nC nC
S T M7822A
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
VSD
Condition
V GS = 0V, Is =14A
Min Typ Max Unit
0.84 1.2 V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max
20 25 V G S =2.5V V G S =3V 25 C 20 16 V G S =4.5V V G S =10V T j=125 C 15 -55 C
ID , Drain C urrent(A)
12
I D , Drain C urrent (A)
8 4 0 V G S =2V
10
5 0 0.0
0
0.5
1
1.5
2
2.5
3
0.6
1.2
1.8
2.4
3.0
3.6
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
2.2 6000 4800 3600 2400 1200 0 C rs s 0 4 8 12 16 20 24 C is s
F igure 2. Trans fer C haracteris tics
V G S =10V I D =14A
R DS (ON) , On-R es is tance Normalized
1.8 1.4 1.0 0.6 0.2 0
C , C apacitance (pF )
C os s
-50
-25
0
25
50
75
100 125 T j( C )
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with Temperature
3
S T M7822A
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
with T emperature
42
F igure 6. B reakdown V oltage V ariation with T emperature
20 10
gF S , T rans conductance (S )
28 21 14 7 0 0 5 10 15 V DS =10V 20 25
Is , S ource-drain current (A)
35
1 0 0.5 0.6 0.7 0.8 T J =25 C 0.9 1.0
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
5
I D , Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
60
V G S , G ate to S ource V oltage (V )
S
(O
4 3 2 1 0 0
V DS =16V I D =14A
L im
it
10
10
10 0m s
N)
ms
RD
11
1s
DC
0.1 0.03
V G S =10V S ingle P ulse T c=25 C 0.1 1 10 20 50
6
12 18
24
30
36 42 48
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe O perating Area
4
S T M7822A
V DD ton V IN D VG S R GE N G
90%
toff tr
90%
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
r(t),Normalized E ffective T ransient T hermal Impedance
1 Duty C ycle=0.5
0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10
-4
P DM t1 1. 2. 3. 4. 10
-2
t2
R qJ A (t)=r (t) * R qJ A R qJ A =S ee Datas heet T J M-T A = P DM* R qJ A (t) Duty C ycle, D=t1/t2 10 100
10
-3
10
-1
1
S quare Wave P uls e Duration (s ec)
F igure .