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STM7822A Dataheets PDF



Part Number STM7822A
Manufacturers SamHop
Logo SamHop
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet STM7822A DatasheetSTM7822A Datasheet (PDF)

S T M7822A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S ( m W ) Max ID 14A R DS (ON) S uper high dense cell design for low R DS (ON ). 7 @ V G S = 10V 9 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C .

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S T M7822A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S ( m W ) Max ID 14A R DS (ON) S uper high dense cell design for low R DS (ON ). 7 @ V G S = 10V 9 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T c=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol Vspike V DS V GS ID IDM IS PD T J , T S TG d Limit 30 25 16 14 56 14 2.5 -55 to 150 Unit V V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 S T M7822A E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 14A V GS =4.5V, ID= 10A V DS = 10V, V GS = 10V V DS = 10V, ID = 14A Min Typ C Max Unit 25 1 V uA 100 nA 0.7 1.2 6 8 10 28 3640 550 420 2.0 7 9 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance C IS S C OS S CRSS c V DS =16V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V DD = 16V, ID = 14A, V GS = 5V, R GE N = 6 ohm V DS =16V, ID =14A,V GS =10V V DS =16V, ID =14A,V GS =5V V DS =16V, ID = 14A, V GS =5V 12.3 10.2 23.8 12.1 73.9 36.2 11.5 9.9 ns ns ns ns nC nC nC nC S T M7822A E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition V GS = 0V, Is =14A Min Typ Max Unit 0.84 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max 20 25 V G S =2.5V V G S =3V 25 C 20 16 V G S =4.5V V G S =10V T j=125 C 15 -55 C ID , Drain C urrent(A) 12 I D , Drain C urrent (A) 8 4 0 V G S =2V 10 5 0 0.0 0 0.5 1 1.5 2 2.5 3 0.6 1.2 1.8 2.4 3.0 3.6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 6000 4800 3600 2400 1200 0 C rs s 0 4 8 12 16 20 24 C is s F igure 2. Trans fer C haracteris tics V G S =10V I D =14A R DS (ON) , On-R es is tance Normalized 1.8 1.4 1.0 0.6 0.2 0 C , C apacitance (pF ) C os s -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T M7822A B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 42 F igure 6. B reakdown V oltage V ariation with T emperature 20 10 gF S , T rans conductance (S ) 28 21 14 7 0 0 5 10 15 V DS =10V 20 25 Is , S ource-drain current (A) 35 1 0 0.5 0.6 0.7 0.8 T J =25 C 0.9 1.0 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 5 I D , Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 60 V G S , G ate to S ource V oltage (V ) S (O 4 3 2 1 0 0 V DS =16V I D =14A L im it 10 10 10 0m s N) ms RD 11 1s DC 0.1 0.03 V G S =10V S ingle P ulse T c=25 C 0.1 1 10 20 50 6 12 18 24 30 36 42 48 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T M7822A V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R qJ A (t)=r (t) * R qJ A R qJ A =S ee Datas heet T J M-T A = P DM* R qJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure .


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