SSM6N24TU

SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N24TU High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.5 V) Ron = 180mΩ (max) (@VGS = 2.5 V) 0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ± 12 0.5 1.5 500 150 −55~150 Unit V V A mW °C °C 1 2 3 6 5 4 0.7±0.05 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). UF6 JEDEC JEITA TOSHIBA ― ― 2-2T1B Weight: 7.0 mg (typ.) Note 1: Mounted on FR4 board. (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit (top ...