STS2300

S amHop Microelectronics C orp. S T S 2300 MAR . 10 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 3.8A R DS (ON) S uper high dense cell design for low R DS (ON ). 40 @ V G S = 4.5V 60 @ V G S = 2.5V 75 @ V G S = 1.8V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 10 3.8 15 1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 100 C /W 1 S T S 2300 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) V GS = 0V, ID = 250uA V DS = 20V, V GS =0V V GS = 10V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID =5.0A V GS = 2.5V, ID =4.0A V GS = 1.8V, ID =1.0A On-S tate Drain Current Forward Transconductance ID(ON) g FS c S ymbol Condition Min Typ C Max Unit 20 1 100 0.6 0.78 1.5 32 50 62 18 5 888 144 115 40 60 75 V uA nA V m-ohm m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S ...