STS2321

SamHop Microelectronics Corp. STS2321 Oct .29 2004 V1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -20V FEATURES ( m W ) Max ID -3.2A RDS(ON) Super high dense cell design for low RDS(ON). 65 @ VGS = -4.5V 90 @ VGS =-2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit -20 10 -3.2 -11 -1.25 1.25 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RthJA 100 C/W 1 STS2321 ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS c Symbol Condition VGS = 0V, ID = -250uA VDS = -16V, VGS= 0V VGS = 10V, VDS = 0V VDS = VGS, ID =-250uA VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -2.0A VDS = -5V, VGS = -4.5V VDS = -5V, ID = -3.2A Min Typ C Max Unit -20 1 100 -0.6 -0.9 -1.5 50 75 8 8 610 155 105 13.9 7.1 75.2 54 7.4 1.2 2.8 65 90 V uA nA V m-ohm m-ohm ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHARACTERISTICS c I...