AP18T10GJ-HF-3

Advanced Power Electronics Corp. AP18T10GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 100V 160mΩ 9A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D (tab) TO-252 (H) The AP18T10GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP18T10GJ-HF-3) is available where a small PCB footprint is required. G D S D (tab) TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=100°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 100 ±20 9 5.6 30 28 0.224 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient(PCB mount)3 Value 4.5 62.5 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient 110 Ordering Information AP18T10GH-HF-3TR AP18T10GJ-HF-3TB RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/ree...