P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP9575AGH/J-HF-3
P-channel Enhancement-mode Power MOSFET
Lower On-resistance Simple D...
Description
Advanced Power Electronics Corp.
AP9575AGH/J-HF-3
P-channel Enhancement-mode Power MOSFET
Lower On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS-compliant, halogen-free
D
BV DSS RDS(ON)
G S
-60V 64mΩ -17A
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9575AGH-HF-3 is in the TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP9575AGJ-HF-3 is in the TO-251 through-hole package which is used where a small PCB footprint or an attached heatsink is required.
G D S
D (tab) TO-252 (H)
D (tab)
G D S
TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=100°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -60 ±30 -17 -11 -60 36 0.29 -55 to 150 -55 to 150
Units V V A A A W W/ °C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB Mount)3
Value 3.5 62.5 110
Unit °C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
Ordering Information
AP9575AGH-HF-3TR : in RoHS-complian...
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