Document
AP9575AGH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Higher Gate-Source Voltage ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-60V 64mΩ -17A
Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575AGJ) are available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -60 +30 -17 -11 -60 36 0.29 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 3.5 62.5 110
Units ℃/W ℃/W ℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1 201105313
AP9575AGH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-12A VDS=VGS, ID=-250uA VDS=-10V, ID=-9A VDS=-60V, VGS=0V VGS=+30V, VDS=0V ID=-12A VDS=-48V VGS=-10V VDS=-30V ID=-12A RG=3.3Ω,VGS=-10V RD=2.5Ω VGS=0V VDS=-25V f=1.0MHz
Min. -60 -1 -
Typ. 12 35 5 12 12 23 45 60 160 120
Max. Units 64 -3 -10 -250 +100 56 V mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Drain-Source Leakage Current (T j=125oC) VDS=-48V, VGS=0V
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
1440 2300
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=-12A, VGS=0V IS=-12A, VGS=0V, dI/dt=-100A/µs
Min. -
Typ. 43 75
Max. Units -1.3 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC .