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AP9575AGJ-HF Dataheets PDF



Part Number AP9575AGJ-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9575AGJ-HF DatasheetAP9575AGJ-HF Datasheet (PDF)

AP9575AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Higher Gate-Source Voltage ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 64mΩ -17A Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575AGJ) are available for low.

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AP9575AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Higher Gate-Source Voltage ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 64mΩ -17A Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575AGJ) are available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -60 +30 -17 -11 -60 36 0.29 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3.5 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 201105313 AP9575AGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-12A VDS=VGS, ID=-250uA VDS=-10V, ID=-9A VDS=-60V, VGS=0V VGS=+30V, VDS=0V ID=-12A VDS=-48V VGS=-10V VDS=-30V ID=-12A RG=3.3Ω,VGS=-10V RD=2.5Ω VGS=0V VDS=-25V f=1.0MHz Min. -60 -1 - Typ. 12 35 5 12 12 23 45 60 160 120 Max. Units 64 -3 -10 -250 +100 56 V mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Drain-Source Leakage Current (T j=125oC) VDS=-48V, VGS=0V Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1440 2300 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-12A, VGS=0V IS=-12A, VGS=0V, dI/dt=-100A/µs Min. - Typ. 43 75 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC .


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