AP9579GI-HF

AP9579GI-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -60V 25mΩ -26.8A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -60 +20 -26.8 -17 -108 31.3 1.92 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Units ℃/W ℃/W 1 201005311 Data and specifications subject to change without notice AP9579GI-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-20A VGS=-4.5V, ID=-15A VGS(th) gfs IDS...