P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9575GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fa...
Description
AP9575GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-60V 70mΩ -16A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575GP) are available for low-profile applications. G D GD S
TO-263(S)
TO-220(P)
S Units V V A A A W W/ ℃ ℃ ℃
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -60 +25 -16 -10 -60 31.3 0.25 -55 to 150 -55 to 150
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 4.0 40 62
Units ℃/W ℃/W ℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1 201007022
AP9575GS/P-HF
Electrical Characteristics@Tj=25oC(...
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