Document
AP18P10GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G
P-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
-100V 180mΩ -12A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18P10GJ) is available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -100 ±20 -12 -10 -48 35.7 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.5 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200810162
AP18P10GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=-1mA VGS=-10V, ID=-8A VGS=-4.5V, ID=-6A
Min. -100 -1 -
Typ. 8 16 4.4 8.7 9 14 45 40 110 70 8
Max. Units 180 210 -3 -10 -25 ±100 25.6 12 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
VDS=VGS, ID=-250uA VDS= -10V, ID= -8A VDS=-80V, VGS=0V VGS= ±20V ID=-8A VDS=-80V VGS=-4.5V VDS=-50V ID=-8A RG=3.3Ω,VGS=-10V RD=6.25Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz
Drain-Source Leakage Current (T j=150 C) VDS=-80V, VGS=0V
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
1590 2550
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=-12A, VGS=0V IS=-8A, VGS=0V, dI/dt=-100A/µs
Min. -
Typ. 49 110
Max. Units -1.3 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP18P10GH/J
40 20
T C = 25 C -ID , Drain Current (A)
30
o
-ID , Drain Current (A)
-10V -7.0V -5.0V -4.5V
T C =150 o C
15
-10V -7.0V -5.0V -4.5V
20
10
V G = -3.0V
5
10
V G = -3.0 V
0 0 4 8 12 16 20
0 0 2 4 6 8 10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
300
2.0
270
I D = -8 A T C =25 ℃ Normalized RDS(ON)
1.6
I D = - 12 A V G = -10V
RDS(ON) (mΩ )
240
210
1.2
180
0.8
150
120
0.4 2 4 6 8 10 -50 0 50 100 150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.0
8
6
1.5
4
T j =150 o C
T j =25 o C
Normalized -VGS(th) (V)
-IS(A)
1.0
2
0.5
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4
0.0 -50 0 50 100 150
-V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP18P10GH/J
f=1.0MHz
15 10000
-VGS , Gate to Source Voltage (V)
12
V DS = - 80 V ID= -8A
9
C iss
1000
6 100
C (pF)
C oss C rss
3
0
0 10 20 30 40
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
100us
0.2
0.1
-ID (A)
0.1
1ms
1
0.05
PDM
t
0.02
T C =25 C Single Pulse
0 0.1 1 10
o
10ms 100ms DC
T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.01
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V DS = -5V
12.5
T j =25 o.