AP18P10GS-HF-3

Advanced Power Electronics Corp. AP18P10GS-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -100V 160mΩ -12A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP18P10GS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. D (tab) G D S TO-263 (S) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating -100 ±20 -12 -10 -48 35.7 0.29 2 Units V V A A A W W/ °C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 40 -9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3.5 62 Units °C/W °C/W Ordering Information AP18P10GS-HF-3TR : in RoHS-compliant, halogen-free TO-263, shipped on tape and reel (800 pcs/reel) ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 200801072-3 1/5 Advanced Power E...