P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP18P10GS-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low G...
Description
Advanced Power Electronics Corp.
AP18P10GS-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free
D
BV DSS RDS(ON)
G S
-100V 160mΩ -12A
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP18P10GS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
D (tab)
G D S
TO-263 (S)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating -100 ±20 -12 -10 -48 35.7 0.29
2
Units V V A A A W W/ °C mJ A °C °C
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
40 -9 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 3.5 62
Units °C/W °C/W
Ordering Information
AP18P10GS-HF-3TR : in RoHS-compliant, halogen-free TO-263, shipped on tape and reel (800 pcs/reel)
©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com
200801072-3
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