STC2201

S amHop Microelectronics C orp. S T C 2201 Mar 15 2005 ver1.2 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -2A R DS (ON) S uper high dense cell design for low R DS (ON ). 145 @ V G S = -4.5V 195 @ V G S = -2.5V R ugged and reliable. S OT-323 package. D S OT-323 D S G G S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuousa @ Tc=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 10 -2 -7 -1 1.0 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 125 C /W 1 S T C 2201 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -2.0A V GS = -2.5V, ID = -1.0A V DS = -5V, V GS = -4.5V V DS = -5V, ID = -2.0A Min Typ C Max Unit -20 1 100 -0.5 -0.8 -1.5 120 170 -5 6 216 55 28 145 195 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistanc...