AP13P15GJ

AP13P15GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -150V 300mΩ -13A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control. The through-hole version (AP13P15GJ) is available for low-profile applications. G G D S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -150 ±20 -13 -8.2 52 96 0.77 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.3 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200810051-1/4 AP13P15GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-1mA 2 Min. -150 -1 - Typ. -0.1 6 38 5 15 11 21 60 36 220 60 3.5 Max. Units 300 -...